2N5038 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(20A,140W)

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5038 2N5039
DESCRIPTION
With TO-3 package
High speed
Low collector saturation voltage
APPLICATIONS
They are especially intended for high current
and fast switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
2N5038
2N5039
V_CEO
2N5038
Collector-emitter voltage
2N5039
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_D
Total Power Dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
150
120
90
75
7
20
30
5
140
200
-65~200
UNIT
V
V
V
A
A
A
W
MAX
1.25
UNIT
/W