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| 2N4908 Datasheet, PDF (2/2 Pages) Seme LAB – Bipolar PNP Device in a Hermetically sealed TO3 Metal Package | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
2N4908
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -200mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= -4A; IB= -0.4A
VBE(on) Base-Emitter On Voltage
IC= -4A; VCE= -4V
ICEO
Collector Cutoff Current
VCE= -60V; IB= 0
ICBO
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCB= -60V; IE= 0
VCE= -60V; VBE(off)= -1.5V
VCE= -60V; VBE(off)= -1.5V, TC=150â
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -4A; VCE= -4V
hFE-2
DC Current Gain
IC= -10A; VCE= -4V
fT
Current-GainâBandwidth Product IC= -1A; VCE= -10V; ftest= 1.0MHz
MIN MAX UNIT
-60
V
-0.75
V
-1.5
V
-1.5
V
-1.0
mA
-0.1
mA
-0.1
-2.0
mA
-1.0
mA
20
80
5
4
MHz
isc websiteï¼www.iscsemi.cn
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