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| 2N4908 Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar PNP Device in a Hermetically sealed TO3 Metal Package | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
2N4908
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= -0.75V(Max.)@ IC= -4A
·DC Current Gain-
: hFE= 20-80 @IC= -4A
APPLICATIONS
·Designed for general purpose use in power amplifier and
switching circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
IB
Base Current-Continuous
-4
A
PC
Collector Power Dissipation@TC=25â
150
W
TJ
Junction Temperature
200
â
Tstg
Storage Temperature
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
2.0 â/W
isc websiteï¼www.iscsemi.cn
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