2N3878 Datasheet, PDF (2/2 Pages) GE Solid State – HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2N3878
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=200mA; IB= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VBE(ON) Base-Emitter On Voltage
IC=4A;VCE= 2V
hFE-1*
DC Current Gain
IC= 0.5A; VCE= 2V
hFE-2*
DC Current Gain
IC= 4A; VCE= 2V
hFE-3*
DC Current Gain
IC= 4A; VCE= 5V
hFE-4*
DC Current Gain
*:Pulse test:Pulse width=300us,duty cycle≤2%
IC= 0.5A; VCE= 5V
MIN MAX UNIT
50
V
10
mA
2.0
V
2.5
V
40 200
8
20
50 200
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