2N3878 Datasheet, PDF (1/2 Pages) GE Solid State – HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2N3878
DESCRIPTION
·Excellent Safe Operating Area
·Low Collector-Emitter Saturation Voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·Designed for high speed switching and linear- amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
4
A
PC
Collector Power Dissipation@TC=25℃
35
W
TJ
Junction Temperature
-65~200 ℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
5
℃/W
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