20N60 Datasheet, PDF (2/2 Pages) Unisonic Technologies – 20A, 600V N-CHANNEL POWER MOSFET

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
20N60
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS_(th) Gate Threshold Voltage
RDS(_on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VDS= VGS; ID= 0.25mA
VGS= 10V; ID= 10A
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 600V; VGS= 0
VSD
Forward On-Voltage
IS= 20A; VGS= 0
MIN MAX UNIT
600
V
2
4
V
0.45
Ω
±100 nA
10
μA
1.5
V
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