20N60 Datasheet, PDF (1/2 Pages) Unisonic Technologies – 20A, 600V N-CHANNEL POWER MOSFET

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
20N60
·FEATURES
·Drain Current I_D= 20A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 600V(Min)
·Low ON Resistance
·Fast Switching
R_DS(on) = 0.45Ω(Max)
·DESCRITION
· High efficiency switch mode power supply
·Motor control, UPS, DC
·Choppers and switch-mode
·ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
600
V
±20
V
ID
Drain Current-Continuous
20
A
IDM
Drain Current-Single Plused
80
A
PD
Power Dissipation
250
W
T_j
Max. Operating Junction Temperature
150
℃
T_stg
Storage Temperature range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance, Junction to Case
0.5 ℃/W
R_{th j-a}
Thermal Resistance, Junction to Ambient
40
℃/W
isc website： www.iscsemi.com
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