RT2P21M Datasheet, PDF (2/3 Pages) Isahaya Electronics Corporation – COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON PNP EPITAXIAL TYPE

RT2P21M
COMPOSITE TRANSISTOR WITH RESISTOR
FOR SWITCHING APPLICATION
SILICON PNP EPITAXIAL TYPE
ELECTRICAL CHARACTERISTICS （Ta=25℃）（RTr1、RTr2）
Symbol
Parameter
Test conditions
V_(BR)CBO
I_CBO
h_FE
V_CE(sat)
R₁
f_T
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input resistor
Gain band width product
I _C=-100μA，R_BE=∞
V_CB=-50V，I _E =0
V_CE=-5V，I C=-1mA
I _C=-10mA，I _B=-0.5mA
V_CE=-6V，I _E=10mA
TYPICAL CHARACTERISTICS （Tr1、Tr2）
Limits
Unit
Min Typ Max
-50
-
-
V
-
-
-0.1 μA
100
-
-
-
-
-0.1 -0.3
V
7
10
13 KΩ
150
MHz
Input on voltage - Collector current
-10
VCE=-0.2V
DC forward current gain - Collector current
1000
VCE=-5V
100
-1
-0.1
-0.1
-1
-10
Collector current　Ic (mA)
-100
10
-0.1
Collector current - Input off voltage
-1000
VCE=-5V
-1
-10
-100
Collector current　Ic(mA)
-100
-10
-0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2
Input off voltage　VI(OFF) (V)
ISAHAYA ELECTRONICS CORPORATION