RT2P21M Datasheet, PDF (1/3 Pages) Isahaya Electronics Corporation – COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON PNP EPITAXIAL TYPE

DESCRIPTION
RT2P21M is a composite transistor with built-in bias resistor
FEATURE
●Built-in bias resistor ( R1=10 KΩ)
●Mini package for easy mounting
APPLICATION
Inverted circuit , switching circuit , interface circuit , driver circuit
RT2P21M
COMPOSITE TRANSISTOR WITH RESISTOR
FOR SWITCHING APPLICATION
SILICON PNP EPITAXIAL TYPE
OUTLINE DRAWING
2.1
1.25
Unit:mm
①
⑤
②
③
④
MAXIMUM RATINGS （Ta=25℃）（RTr1、RTr2）
Symbol
Parameter
V_CBO
Collector to Base voltage
V_EBO
Emitter to Base voltage
V_CEO
Collector to Emitter voltage
I_C
Collector current
I _CM
Peak Collector current
P_C
Collector dissipation（Total Ta=25℃）
T_j
Junction temperature
T_stg
Storage temperature
⑤④
RTr1
RTr2
R1
R1
①
②
③
TERMINAL CONNECTOR
①：BASE１
②：EMITTER（COMMON）
③：BASE２
④：COLLECTOR２
⑤：COLLECTOR１
EIAJ：－
JEDEC：－
Ratings
-50
-6
-50
-100
-200
150
＋150
-55～＋150
Unit _MARKING
V
⑤
④
V
V
mA
P7
mA
mW
① ②③
℃
℃
ISAHAYA ELECTRONICS CORPORATION