ISC6053AU1 Datasheet, PDF (2/4 Pages) Isahaya Electronics Corporation – FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE

PRELIMINARY
※This datasheet is possibility of change.
Because this device is developing now.
ISC6053AU1
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
TYPICAL CHARACTERISTICS
COLLECTOR DISSIPATION VS. AMBIENT TEMPERATURE
200
150
100
50
10000
DC FORWARD CURRENT GAIN VS.
COLLECTOR CURRENT
VCE=4V
85℃
1000
25℃
100
-40℃
0
0
50
100
150
AMBIENT TEMPERATURE Ta(℃)
COMMON EMITTER TRANSFER(1)
700
VCE=4V
600
85℃
500
400
25℃
300
-40℃
200
100
0
0
0.2
0.4
0.6
0.8
1
1.2
BASE TO EMITTER VOLTAGE VBE (V)
800
700
600
COMMON EMITTER OUTPUT(1)
IB=10mA IB=9mA
IB= 8 mA
IB=7mA
IB=6mA
Ta=25℃
500
400
300
200
IB= 2 mA
IB=3mA
IB= 1 mA
IB=4mA
IB= 5 mA
100
IB=0mA
0
0
1
2
3
4
5
COLLECTOR TO EMITTER VOLTAGE VCE(V)
10
1
10
100
COLLECTOR CURRENT IC (mA)
1000
COMMON EMITTER TRANSFER(2)
10
VCE=4V
8
85℃
6
25℃
4
-40℃
2
0
0
0.2
0.4
0.6
0.8
1
1.2
BASE TO EMITTER VOLTAGE VBE (V)
400
350
300
250
200
150
100
50
0
0
COMMON EMITTER OUTPUT(2)
IB=1.0mA
IB=0.9mA
IB=0.8mA
IB=0.7mA
Ta=25℃
IB=0.6mA
IB=0.5mA
IB=0.4mA
IB=0.3mA
IB=0.2mA
IB= 0 .1 mA
IB=0mA
5
10
15
20
COLLECTOR TO EMITTER VOLTAGE VCE(V)
ISAHAYA ELECTRONICS CORPORATION