ISC6053AU1 Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE

PRELIMINARY
※This datasheet is possibility of change.
Because this device is developing now.
ISC6053AU1
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
ISC6053AU1 is a silicon NPN epitaxial type transistor
Designed with high collector current, low V_CE(sat).
FEATURE
●High collector current
I_{C（MAX）}=650mA
●Low collector to emitter saturation voltage
V_{CE（sat）}<0.5V_max
OUTLINE DRAWING
1.5
0.35 0.8
Unit：mm
0.35
①
②
③
APPLICATION
For switching application, small type motor drive application.
TERMINAL CONNECTOR
①：BASE
②：EMITTER
③：COLLECTOR
JEITA：SC-75A
JEDEC： －
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
Ratings
Unit
V_CEO Collector to Emitter voltage
20
V
V_CBO Collector to Base voltage
25
V
V_EBO Emitter to Base voltage
4
V
I_C
Collector current
650
mA
P_C Collector dissipation
150
mW
T_j Junction temperature
150
℃
T_stg Storage temperature
-55～150
℃
MARKING
Type Name
hFE ITEM
・ BG
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
Parameter
V_{（BR）CEO}
V_{（BR）CBO}
V_{（BR）EBO}
I_CBO
I_EBO
h_FE※
V_{CE（sat）}
f_T
C to E break down voltage
C to B break down voltage
E to B break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
Gain band width product
*：It shows hFE classification in below table.
Test condition
I_C=100uA, I_B=0
I_C=10uA, I_E=0
I_E=10uA, I_C=0
V_CB=25V, I_E=0
V_EB=2V, I_C=0
V_CE=4V,I_C=100mA
I_C=500mA, I_B=25mA
V_CE=6V,I_E=-10mA,
Limits
Unit
Min Typ Max
20
－
－
V
25
－
－
V
4
－
－
V
－
－
1
uA
－
－
1
uA
150
－
800
－
－
0.3 0.5
V
－
290
－ MHz
ITEM
hFE
E
F
G
150～300 250～500 400～800
ISAHAYA ELECTRONICS CORPORATION