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ISC6053AM1 Datasheet, PDF (2/4 Pages) Isahaya Electronics Corporation – FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE | |||
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ISC6053AM1
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
TYPICAL CHARACTERISTICS
COLLECTOR DISSIPATION VS. AMBIENT TEMPERATURE
300
250
200
150
100
50
0
0
50
100
150
AMBIENT TEMPERATURE Ta(â)
10000
DC FORWARD CURRENT GAIN VS.
COLLECTOR CURRENT
VCE=4V
85â
1000
25â
100
-40â
10
1
10
100
COLLECTOR CURRENT IC (mA)
1000
COMMON EMITTER TRANSFER(1)
700
VCE=4V
600
85â
500
400
25â
300
-40â
200
100
0
0
0.2
0.4
0.6
0.8
1
1.2
BASE TO EMITTER VOLTAGE VBE (V)
800
700
600
COMMON EMITTER OUTPUT(1)
IB=10mA IB=9mA
IB= 8 mA
IB=7mA
IB=6mA
Ta=25â
500
400
300
200
IB= 2 mA
IB=3mA
IB= 1 mA
IB=4mA
IB= 5 mA
100
IB=0mA
0
0
1
2
3
4
5
COLLECTOR TO EMITTER VOLTAGE VCE(V)
COMMON EMITTER TRANSFER(2)
10
VCE=4V
8
85â
6
25â
4
-40â
2
0
0
0.2
0.4
0.6
0.8
1
1.2
BASE TO EMITTER VOLTAGE VBE (V)
400
350
300
250
200
150
100
50
0
0
COMMON EMITTER OUTPUT(2)
IB=1.0mA
IB=0.9mA
IB=0.8mA
IB=0.7mA
Ta=25â
IB=0.6mA
IB=0.5mA
IB=0.4mA
IB=0.3mA
IB=0.2mA
IB= 0 .1 mA
IB=0mA
5
10
15
20
COLLECTOR TO EMITTER VOLTAGE VCE(V)
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