ISC6053AM1 Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE

ISC6053AM1
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
ISC6053AM1 is a silicon NPN epitaxial type transistor
Designed with high collector current, low V_CE(sat).
FEATURE
●High collector current
I_{C（MAX）}=650mA
●Low collector to emitter saturation voltage
V_{CE（sat）}<0.5V_max
OUTLINE DRAWING
2.1
0.425 1.25 0.425
Unit：mm
①
②
③
APPLICATION
For switching application, small type motor drive application.
TERMINAL CONNECTOR
①：BASE
②：EMITTER
③：COLLECTOR
JEITA：SC-70
JEDEC： －
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
Ratings
Unit
V_CEO Collector to Emitter voltage
20
V
V_CBO Collector to Base voltage
25
V
V_EBO Emitter to Base voltage
4
V
I_C
Collector current
650
mA
P_C Collector dissipation
200
mW
T_j Junction temperature
150
℃
T_stg Storage temperature
-55～150
℃
MARKING
Type Name
hFE ITEM
・ BG
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
Parameter
V_{（BR）CEO}
V_{（BR）CBO}
V_{（BR）EBO}
I_CBO
I_EBO
h_FE※
V_{CE（sat）}
f_T
C to E break down voltage
C to B break down voltage
E to B break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
Gain band width product
*：It shows hFE classification in below table.
Test condition
IC=100uA, IB=0
IC=10uA, IE=0
IE=10uA, IC=0
VCB=25V, IE=0
VEB=2V, IC=0
VCE=4V,IC=100mA
IC=500mA, IB=25mA
VCE=6V,IE=-10mA,
Limits
Unit
Min Typ Max
20
V
25
V
4
V
1
uA
1
uA
150
800
-
0.3 0.5
V
290
MHz
ITEM
hFE
E
F
G
150～300 250～500 400～800