ISC6046AU1 Datasheet, PDF (2/4 Pages) Isahaya Electronics Corporation – FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE

PRELIMINARY
※This datasheet is possibility of change.
Because this device is developing now.
ISC6046AU1
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
TYPICAL CHARACTERISTICS
COLLECTOR DISSIPATION VS.
COLLECTOARMDBISISEIPNATTIOTNEVMSP. AEMRBAIETNTUTREEMPERATURE
200
150
1000
DC FORWARD CURRENT GAIN VS.
COLLECTOR CURRENT
Ta=25℃
VCE=10V
100
100
VCE=1V
50
0
0
50
100
150
AMBI^AE^MN^BT^IENT^TE^TM^EMP^PE^ER^RAA^TT^UU^RER^TE^a(T^℃a⁾(℃)
10
0.1
1
10
100
1000
COLLECTOR CURRENT IC(mA)
COMMON EMITTER OUTPUT
0.25
0.20
Ta=25℃
IB=1.0mA
IB=0.9mA
0.15
IB=0.8mA
IB=0.7mA
IB=0.6mA
0.10
IB=0.5mA
IB=0.4mA
0.05
0.00
IB=0.3mA
IB=0.2mA
IB=0.1mA
0
2
4
6
8
10
COLLECTOR TO EMITTER VOLTAGE　VCE(V)
C TO E SATURATION VOLTAGE VS.
COLLECTOR CURRENT
10
Ta=25℃
IC/IB=10
1
0.1
COLLECTOR TO EMITTER VOLTAGE VS.
BASE CURRENT
2.0
Ta=25℃
1.6
IC=1mA
IC=10mA IC=100mA
IC=600mA
1.2
0.8
0.4
0.0
0.001 0.01 0.1
1
10 100
BASE CURRENT　IB(mA)
B TO E SATURATION VOLTAGE　VS.
COLLECTOR CURRENT
10
Ta=25℃
IC/IB=10
1
0.01
0.001
0.01
0.1
1
COLLECTOR CURRENT Ic(A)
0.1
0.001
0.01
0.1
1
COLLECTOR CURRENT Ic(A)
ISAHAYA ELECTRONICS CORPORATION