ISC6046AU1 Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE

PRELIMINARY
※This datasheet is possibility of change.
Because this device is developing now.
ISC6046AU1
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
ISC6046AU1 is a silicon NPN epitaxial type transistor designed with
high collector current, low V_{CE（sat）.}
OUTLINE DRAWING
1.5
0.35 0.8
Unit：mm
0.35
FEATURE
●High collector current
I_{C（MAX）}=600mA
●Low collector to emitter saturation voltage
V_{CE（sat）}<0.3V_max(IC=150mA、IB=15mA）
①
②
③
APPLICATION
For switching application, small type motor drive application.
MAXIMUM RATINGS（Ta.=25℃）
記号
項
目
V_CEO Collector to Emitter voltage
V_CBO Collector to Base voltage
V_EBO Emitter to Base voltage
I_C
Collector current
P_C Collector dissipation
T_j Junction temperature
T_stg Storage temperature
定格値
40
75
6
600
150
+150
-55～+150
単位
V
V
V
mA
mW
℃
℃
TERMINAL CONNECTOR
①：BASE
JEITA：SC-75A
②：EMITTER
JEDEC：－
③：COLLECTOR
MARKING
TypeName
B_・W
ELECTRICAL CHARACTERISTICS（Ta.=25℃）
Symbol
Parameter
Test condition
V_{（BR）CEO}
V_{（BR）CBO}
V_{（BR）EBO}
I_CBO
I_EBO
h_FE
V_{CE（sat）}
V_{BE（sat）}
f_T
C_ob
C to E break down voltage
C to B break down voltage
E to B break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
B to E saturation voltage
Gain band width product
Collector output capacitance
I_C=1mA、I_B=0
I_C=10uA、I_E=0
I_E=10uA、I_C=0
V_CB=60V、I_E=0
V_EB=3V、I_C=0
I_C=150mA、V_CE=10V
I_C=150mA、I_B=15mA
I_C=150mA、I_B=15mA
I_E=-20mA、V_CE=20V、f=100MHz
V_CB=10V、f=1MHz
Limits
Unit
Min Typ Max
40
－
－
V
75
－
－
V
6
－
－
V
－
－ 100 nA
－
－ 100 nA
100
－
300
－
－
－
0.3
V
0.6
－
1.2
V
－
250
－
MHz
－
－
8
pF
ISAHAYA ELECTRONICS CORPORATION