ISC4356AS1 Datasheet, PDF (2/4 Pages) Isahaya Electronics Corporation – FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE

TYPICAL CHARACTERISTICS
COLLECTOR DISSIPATION VS.
AMBIENT TEMPERATURE
1000
800
600
400
200
0
0
40
80 120 160 200
AMBIENT TEMPERATURE Ta(℃)
〈SMALL-SIGNAL TRANSISTOR〉
ISC4356AS1
FOR HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
Pc _{= 0.6W}
ISAHAYA ELECTRONICS CORPORATION