ISC4356AS1 Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE

〈SMALL-SIGNAL TRANSISTOR〉
ISC4356AS1
FOR HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
OUTLINE DRAWING
ISC4356AS1 is a silicon NPN epitaxial type transistor
4.0
designed relay drive application.
Unit：ｍｍ
FEATURE
●High voltage. V_CEo=60V
●High collector current. I_C=2A
●Low V_CE(sat) V_CE(sat)=0.5V max (@I_C=1A, I_B=50mA)
●High collector dissipation. P_C=600mW
0.1
0.45
2.5 2.5
APPLICATION
Audio machine, VCR, relay drive.
①②③
MAXI^.MUM RATINGS（Ta=25℃）
Symbol
VCBO
VEBO
VCEO
I_C
I_CM
P_c
T_j
T_stg
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
Unit
60
V
6
V
60
V
2
A
3
A
600
mW
+150
℃
-55～+150
℃
JEITA：
JEDEC：
TERMINAL CONNECTER
①：EMITTER
②：COLLECTOR
③：BASE
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Parameter
Test conditions
V(BR)CBO
V(BR)EBO
V(BR)CEO
ICBO
IEBO
hFE※
VCE(sat)
fT
Cob
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Voltage
Gain band width product
Collector output capacitance
I_C= 10μA , I_E =0mA
I_E= 10μA , I_C =0mA
I_C= 2mA , RBE= ∞
V_CB= 50V , I_E= 0mA
V_EB = 4V , I_C= 0mA
V_CE = 4V , I_C= 100mA
I_C=1A , I_B= 50mA
V_CE= 10V , I_E= -10mA
V_CB= 10V , I_E= 0mA,f=1MHz
Limits
Unit
Min Typ Max
60
-
-
V
6
-
-
V
60
-
-
V
-
-
0.2 μA
-
-
0.2 μA
55
-
300
-
-
0.2
0.5
V
-
80
-
MHz
-
18
-
pF
※） It shows hFE classification in right table.
Item
hFE item
C
55～110
D
90～180
E
150～300
ISAHAYA ELECTRONICS CORPORATION