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| ISC3581AS1 Datasheet, PDF (2/3 Pages) Isahaya Electronics Corporation – FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE | |||
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ãSMALL-SIGNAL TRANSISTORã
ISC3581AS1
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
TYPICAL CHARACTERISTICS
COLLECTOR DISSIPATION VS.
AMBIENT TEMPERATURE
1000
800
600
400
200
0
0
40
80 120 160 200
AMBIENT TEMPERATURE Ta(â)
ISAHAYA ELECTRONICS CORPORATION
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