ISC3581AS1 Datasheet, PDF (1/3 Pages) Isahaya Electronics Corporation – FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE

〈SMALL-SIGNAL TRANSISTOR〉
ISC3581AS1
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
ISC3581AS1 is a silicon NPN epitaxial type transistor
designed for high collector current application.
Complementary with ISA1399AS1.
FEATURE
●High collector current. I_CM=600mA
●High gain band width product. fT=150MHz typ
●High V_CEO. V_CEO=50V
●Excellent linearity of DC forward current gain.
OUTLINE DRAWING
4.0
0.1
0.45
2.5 2.5
Unit：ｍｍ
APPLICATION
For switching, small type motor drive application.
①②③
JEITA：-
JEDEC：-
.
MAXIMUM RATINGS（Ta=25℃）
Symbol
VCBO
VEBO
VCEO
I_C
I_CM
P_c
T_j
T_stg
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak collector current
Collector dissipation
Junction temperature
Storage temperature
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
Parameter
V(BR)CBO
V(BR)EBO
V(BR)CEO
ICBO
IEBO
hFE※
VCE(sat)
fT
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Voltage
Gain band width product
※） It shows hFE classification in right table.
Ratings
Unit
55
V
4
V
50
V
400
mA
600
mA
600
mW
+150
℃
-55～+150
℃
Test conditions
I_C= 10μA , I_E =0mA
I_E= 10μA , I_C =0mA
I_C= 100μA , RBE= ∞
V _CB= 25V , I _E= 0mA
V _EB=2V , I _C= 0mA
V _CE = 4V , I_C= 100mA
I _C=200mA , I _B= 10mA
V _CE=6V , I _E= -10mA
D
90～180
TERMINAL CONNECTER
①：EMITTER
②：COLLECTOR
③：BASE
MARKING
Type name
581
□□F
Lot No
hFE ITEM
Limits
Unit
Min Typ Max
55
-
-
V
4
-
-
V
50
-
-
V
-
-
1
μA
-
-
1
μA
90
-
500
-
-
0.15 0.5
V
-
150
-
MHz
E
F
150～300 250～500
ISAHAYA ELECTRONICS CORPORATION