ISA2188AU1 Datasheet, PDF (2/4 Pages) Isahaya Electronics Corporation – FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

PRELIMINARY
※This datasheet is possibility of change.
Because this device is developing now.
ISA2188AU1
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
TYPICAL CHARACTERISTICS
COLLECTOR DISSIPATION VS. AMBIENT TEMPERATURE
200
150
100
50
COLLECTOR TO EMITTER SATURATION VOLTAGE VS.
COLLECTOR CURRENT
-1000
IC/IB=20
-100
85℃
25℃
-10
-40℃
0
0
50
100
150
AMBIENT TEMPERATURE Ta(℃)
10000
1000
DC FORWARD CURRENT GAIN VS.
COLLECTOR CURRENT
VCE=-4V
85℃
25℃
-40℃
100
10
-0.1
-1
-10
-100
COLLECTOR CURRENT IC (mA)
-1000
-800
-600
COMMON EMITTER OUTPUT(1)
Ta=25℃
-8mA
-9mA
-10mA
-7mA
-6mA
-5mA
-4mA
-3mA
-400
-2mA
-200
-0
-0
Pc=150mW
-1mA
IB=0mA
-1
-2
-3
-4
-5
COLLECTOR TO EMITTER VOLTAGE VCE(V)
-1
-1
-10
-100
COLLECTOR CURRENT IC(mA)
-1000
-100
COMMON EMITTER TRANSFER
VCE=-4V
25℃
-10
85℃
-1
-40℃
-1000
-0.1
-0.01
-0.1
-200
-160
-1
-10
BASE TO EMITTER VOLTAGE VBE (V)
COMMON EMITTER OUTPUT(2)
-0.6mA
-0.5mA
-0.4mA
-0.3mA
-120
-0.2mA
-80
-0.1mA
-40
-0
-0
IB=0mA
Pc=150mW
-5
-10
-15
-20
COLLECTOR TO EMITTER VOLTAGE VCE(V)
ISAHAYA ELECTRONICS CORPORATION