ISA2188AU1 Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

PRELIMINARY
※This datasheet is possibility of change.
Because this device is developing now.
ISA2188AU1
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
ISA2188AU1 is a silicon PNP epitaxial type transistor
Designed with high collector current, low V_CE(sat).
FEATURE
●High collector current
I_{C（MAX）}=-650mA
●Low collector to emitter saturation voltage
V_{CE（sat）}<-0.7V_max
OUTLINE DRAWING
1.5
0.35 0.8
Unit：mm
0.35
①
②
③
APPLICATION
For switching application, small type motor drive application.
TERMINAL CONNECTOR
①：BASE
②：EMITTER
③：COLLECTOR
JEITA：SC-75A
JEDEC： －
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
Ratings
Unit
V_CEO Collector to Emitter voltage
-20
V
V_CBO Collector to Base voltage
-25
V
V_EBO Emitter to Base voltage
-4
V
I_CM Peak collector current
-1000
mA
I_C
Collector current
-650
mA
P_C Collector dissipation
150
mW
T_j Junction temperature
150
℃
T_stg Storage temperature
-55～150
℃
MARKING
Type Name
hFE ITEM
・AF
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
Parameter
Test condition
V_{（BR）CEO} C to E break down voltage
V_{（BR）CBO} C to B break down voltage
V_{（BR）EBO} E to B break down voltage
I_CBO Collector cut off current
I_EBO Emitter cut off current
h_FE※ DC forward current gain
V_{CE（sat）} C to E saturation voltage
f_T
Gain band width product
*：It shows hFE classification in below table.
I_C=-100uA, I_B=0
I_C=-10uA, I_E=0
I_E=-10uA, I_C=0
V_CB=-25V, I_E=0
V_EB=-2V, I_C=0
I_C=-100mA, V_CE=-4V
I_C=-500mA, I_B=-25mA
I_E=10mA, V_CE=-6V,f=100MHz
Limits
Unit
Min Typ Max
-20
－
－
V
-25
－
－
V
-4
－
－
V
－
－
-1
uA
－
－
-1
uA
150
－
800
－
－
-0.3 -0.7
V
－
210
－ MHz
ITEM
hFE
E
F
G
150～300 250～500 400～800
ISAHAYA ELECTRONICS CORPORATION