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ISA2188AM1 Datasheet, PDF (2/4 Pages) Isahaya Electronics Corporation – FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE | |||
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ISA2188AM1
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
TYPICAL CHARACTERISTICS
COLLECTOR DISSIPATION VS. AMBIENT TEMPERATURE
300
250
200
150
100
50
0
0
50
100
150
AMBIENT TEMPERATURE Ta(â)
10000
1000
DC FORWARD CURRENT GAIN VS.
COLLECTOR CURRENT
VCE=-4V
85â
25â
-40â
100
10
-0.1
-1
-10
-100
COLLECTOR CURRENT IC (mA)
-1000
-800
-600
COMMON EMITTER OUTPUT(1)
-8mA
-9mA
-10mA
-7mA
-6mA
-5mA
Ta=25â
-4mA
-3mA
-400
-2mA
-200
Pc=200mW
-1mA
IB=0mA
-0
-0
-1
-2
-3
-4
-5
COLLECTOR TO EMITTER VOLTAGE VCE(V)
COLLECTOR TO EMITTER SATURATION VOLTAGE VS.
COLLECTOR CURRENT
-1000
IC/IB=20
-100
85â
25â
-10
-40â
-1
-1
-10
-100
COLLECTOR CURRENT IC(mA)
-1000
-100
COMMON EMITTER TRANSFER
VCE=-4V
25â
-10
85â
-1
-40â
-1000
-0.1
-0.01
-0.1
-200
-160
-120
-1
-10
BASE TO EMITTER VOLTAGE VBE (V)
COMMON EMITTER OUTPUT(2)
-0.6mA
-0.5mA
-0.4mA
Ta=25â
-0.3mA
-0.2mA
-80
-0.1mA
-40
-0
-0
IB=0mA
Pc=200mW
-5
-10
-15
-20
COLLECTOR TO EMITTER VOLTAGE VCE(V)
ISAHAYA ELECTRONICS CORPORATION
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