ISA2188AM1 Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

ISA2188AM1
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
ISA2188AM1 is a silicon PNP epitaxial type transistor
Designed with high collector current, low V_CE(sat).
FEATURE
●High collector current
I_{C（MAX）}=-650mA
●Low collector to emitter saturation voltage
V_{CE（sat）}<-0.7V_max
OUTLINE DRAWING
2.1
0.425 1.25 0.425
Unit：mm
①
②
③
APPLICATION
For switching application, small type motor drive application.
TERMINAL CONNECTOR
①：BASE
②：EMITTER
③：COLLECTOR
JEITA：SC-70
JEDEC： －
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
Ratings
Unit
V_CEO Collector to Emitter voltage
-20
V
V_CBO Collector to Base voltage
-25
V
V_EBO Emitter to Base voltage
-4
V
I_CM Peak collector current
-1000
mA
I_C
Collector current
-650
mA
P_C Collector dissipation
200
mW
T_j Junction temperature
150
℃
T_stg Storage temperature
-55～150
℃
MARKING
Type Name
hFE ITEM
・AF
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
Parameter
Test condition
V_{（BR）CEO} C to E break down voltage
V_{（BR）CBO} C to B break down voltage
V_{（BR）EBO} E to B break down voltage
I_CBO Collector cut off current
I_EBO Emitter cut off current
h_FE※ DC forward current gain
V_{CE（sat）} C to E saturation voltage
f_T
Gain band width product
*：It shows hFE classification in below table.
IC=-100uA, IB=0
IC=-10uA, IE=0
IE=-10uA, IC=0
VCB=-25V, IE=0
VEB=-2V, IC=0
IC=-100mA, VCE=-4V
IC=-500mA, IB=-25mA
IE=10mA, VCE=-6V,f=100MHz
Limits
Unit
Min Typ Max
-20
V
-25
V
-4
V
-1
uA
-1
uA
150
800
-
-0.3 -0.7
V
210
MHz
ITEM
hFE
E
F
G
150～300 250～500 400～800
ISAHAYA ELECTRONICS CORPORATION