INA5001AP1 Datasheet, PDF (2/4 Pages) Isahaya Electronics Corporation – FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE

TYPICIAL CHARACTERISTICS
1000
Collector dissipation-AMBIENT TEMPERATURE
800
600
400
200
0
0
40
80
120
160
200
AMBIENT TEMPERATURE　Ta　(℃)
-100
COMMON EMITTER TRANSFER
VCE=-4V
Ta=85℃
-10
25℃ _-40℃
-1
-0.1
-0
-0.2 -0.4 -0.6 -0.8 -1 -1.2
BASE TO EMITTER VOLTAGE　VBE　(V)
COLLECTOR TO EMITTERSATURATION VOLTAGE
VS. BASE CURRENT
-1.6
Ta=25℃
-1.4
-1.2
-1
-0.8
-0.6
-0.4
-0.2
-0
-0.1
-1
-10
BASE CURRENT　IB　(mA)
-100
〈SMALL-SIGNAL TRANSISTOR〉
INA5001AP1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
-0.6
-0.4
-0.2
COMMON EMITTER OUTPUT
PcMAX=0.5W
-5.0mA
-4.5mA
-4.0mA
-3.5mA
-3.0mA
-2.5mA
Ta=25℃
-2.0mA
-1.5mA
-1mA
IB=-0.5mA
-0
-0 -0.5 -1 -1.5 -2 -2.5 -3
COLLECTOR TO EMITTER VOLTAGE VCE (V)
1000
DC forward current gain VS. Collector current
VCE=-4V
Ta=85℃
25℃
-40℃
100
10
-0.1
-1
-10
-100
Collector current　IC(mA)
-1000
COLLECTOR TO EMITTERSATURATION VOLTAGE
VS. COLLECTOR CURRENT
-1000
IC/IB=10
-100
Ta=85℃
25℃
-10
-0.1
-40℃
-1
-10
-100
COLLECTOR CURRENT　IC(mA)
-1000
ISAHAYA ELECTRONICS CORPORATION