INA5001AP1 Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE

〈SMALL-SIGNAL TRANSISTOR〉
INA5001AP1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
INA5001AP1 is a super mini package resin sealed
silicon PNP epitaxial transistor,
It is designed for relay draive or Power supply application.
.
OUTLINE DRAWING
4.6 MAX
1.6
Unit：ｍｍ
1.5
FEATURE
●Super mini package for easy mounting
●Low VCE(sat) VCE(sat)=-0.5 V max(@IC=-500mA/IB=-50mA)
●High collector current IC=-1A
●High voltage VCEO=-50V
APPLICATION
Relay drive, Power supply for audio equipment, VTR , etc
MAXIMUM RATINGS（Ta=25℃）
Symbol
V_CBO
Parameter
Collector to Base voltage
Ratings
Unit
-50
V
E ^CB
0.53
MAX
1.5
3.0
0.4
0.48 MAX
マMーARキKンINグG
TERMINAL CONNECTER
①：BASE ^{電極接続}
②：EMITT^ＥER^{: エミッタ}
Ｃ: コレクタ
③：COLLE_ＢC_:T_ベOR_ース
JEITA:SC-62
JEDEC:SOT-89
EIAJ : SC-62
JEDEC :
V_EBO
Emitter to Base voltage
-5
V
V_CEO Collector to Emitter voltage
-50
V
MARKING
TYPE NAME
IC
Collector current
ICM
Peak collector current
-1
A
-2
A
AZ
PC
Collector dissipation
Tj
Junction temperature
Tstg
Storage temperature
500
mW
＋150
℃
-55～＋150 ℃
ELECTRICAL CHARACTERISTICS（Ta=25℃）
W
LOT №
hFE
Parameter
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Voltage
Gain bandwidth product
Collector output capacitance
Symbol
Test conditions
V(BR)CBO
V(BR)EBO
V(BR)CEO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
I _C=-10μA，I _E=0mA
I _E=-10μA，I _C=0mA
I _C=-1mA，R_BE=∞
V_CB=-50V，I _E =0mA
V_EB=-5V，I C=0mA
VCE=-4V，IC=-0.1A
IC=-500mA，I _B=-50mA
VCE=-2V，IE=500mA
VCB=-10V，IE=0mA，f=1MHz
Limits
Unit
Min Typ Max
-50
V
-5
V
-50
V
-0.1 μA
-0.1 μA
160
380
-
-0.5
V
120
MHz
12
pF
ISAHAYA ELECTRONICS CORPORATION