2SA1235 Datasheet, PDF (2/4 Pages) Isahaya Electronics Corporation – FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(mini type)

〈SMALL-SIGNAL TRANSISTOR〉
2SA1235
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE(mini type)
COMMON EMITTER OUTPUT
-50
0.18mA
Ta=25℃
0.16mA
-40
0.14mA
0.12mA
0.10mA
-30
0.08mA
-20
0.06mA
-10
-0
-0
0.04mA
0.02mA
IB=0
-1
-2
-3
-4
-5
COLLECTOR EMITTER VOLTAGE VCE(V)
10000
DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
Ta=25℃
VCE=-6V
100(@IC=-1mA)
1000
100
10
COMMON EMITTER TRANSFER
-50
Ta=25℃
VCE=-6V
-40
-30
-20
-10
-0
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
BASE TO EMITTER VOLTAGE VBE(V)
GAIN BAND WIDTH PRODUCT
VS. EMITTER CURRENT
250
Ta=25℃
VCE=-6V
200
150
100
50
1
-0.1
-1
-10
-100
COLLECTOR CURRENT IC(mA)
-1000
COLLECTOR OUTPUT CAPACITANCE
VS. COLLECTOR TO BASE VOLTAGE
100
Ta=25℃
IE=0
f=1MHz
10
0
0.1
1
10
100
EMITTER CURRENT IE(mA)
COLLECTOR DISSIPATION VS.AMBIENT TEMPERTURE
250
200
150
100
1
50
0.1
-0.1
-1
-10
COLLECTOR TO BASE VOLTAGE VCB(V)
-100
0
0
25
50
75
100
125
150
AMBIENT TEMPERTURE Ta (℃)
ISAHAYA ELECTRONICS CORPORATION