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2SA1235 Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(mini type) | |||
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ãSMALL-SIGNAL TRANSISTORã
DESCRIPTION
2SA1235 is a mini package resin sealed
silicon PNP epitaxial transistor,
It is designed for low frequency voltage application.
.
FEATURE
âSmall collector to emitter saturation voltage.
VCE(sat)=-0.3V maxï¼@Ic=-100mA,IB=-10mAï¼
âExcellent linearity of DC forward gain.
âSuper mini package for easy mounting
2SA1235
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE(mini type)
OUTLINE DRAWING
0.5
2.5
1.5 0.5
Unitï¼ï½ï½
â
â¡
â¢
APPLICATION
For Hybrid IC,small type machine low frequency voltage
Amplify application.
MAXIMUM RATINGSï¼Ta=25âï¼
Symbol
Parameter
Ratings
Unit
VCBO Collector to Base voltage
-50
V
VCEO Collector to Emitter voltage
-50
V
VEBO
Emitter to Base voltage
-6
V
IO
Collector current
-200
mA
Pc
Collector dissipation
200
mW
Tj
Junction temperature
ï¼150
â
Tstg
Storage temperature
-55ï½ï¼150 â
JEITAï¼SC-59
JEDECï¼Similar to TO-236
TERMINAL CONNECTER
â ï¼BASE
â¡ï¼EMITTER
â¢ï¼COLLECTOR
ELECTRICAL CHARACTERISTICSï¼Ta=25âï¼
Parameter
Symbol
Test conditions
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
Noise figure
V(BR)CEO
ICBO
IEBO
hFE
hFE
VCE(sat)
fT
Cob
NF
I C=-100μA ,R BE=â
V CB=-50V, I E=0mA
V EB=-6V, I C=0mA
V CE=-6V, I C=-1mA
â»
V CE=-6V, I C=-0.1mA
I C=-100mA ,IB=-10mA
V CE=-6V, I E=10mA
V CB=-6V, I E=0,f=1MHz
V CE=-6V, I E=0.3mA,f=100Hz,RG=10kΩ
Limits
Unit
Min Typ Max
-50
-
-
V
-
-
-0.1 μA
-
-
-0.1 μA
150
-
800
90
-
-
-
-
-0.3
V
-
200
-
MHz
-
4
-
pF
-
-
20
dB
â»ï¼ It shows hFE classification in below table.
Item
ï¼¥
F
G
ï½ï¼¦ï¼¥ Item
150ï½300 250ï½500 400ï½800
ISAHAYA ELECTRONICS CORPORATION
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