IRG7PH30K10DPBF_15 Datasheet, PDF (9/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

900
18
800
16
tf
700
14
600
12
500
10
90% I_CE
400
8
300
200 ^{5% VCE}
6
5% I_CE
4
100
2
0
-100
-5
Eoff Loss
0
5
0
-2
10
time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ T_J = 150°C using Fig. CT.4
100
12.5
0
-100
-200
10
Q_RR
7.5
t_RR
5
-300
2.5
-400
0
-500
-600
Peak
I_RR
-700
-800
10%
Peak
IRR
-900
-2.50
0.00
2.50
time (µS)
-2.5
-5
-7.5
-10
-12.5
5.00
Fig. WF3 - Typ. Diode Recovery Waveform
@ T_J = 150°C using Fig. CT.4
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IRG7PH30K10DPbF
900
45
800
40
700
35
tr
600
30
500
90% test
400 _current
300
200 ^{10% test}
current
100
25
TEST CURRENT
20
15
10
5% V_CE
5
0
0
Eon Loss
-100
-5
-1.8 -0.8 0.2 1.2 2.2 3.2
time (µs)
Fig. WF2 - Typ. Turn-on Loss Waveform
@ T_J = 150°C using Fig. CT.4
800
80
700
VCE
70
600
60
500
ICE
50
400
40
300
30
200
20
100
10
0
0
-100
-10
-5
0
5 10
Time (uS)
Fig. WF4 - Typ. S.C. Waveform
@ T_J = 150°C using Fig. CT.3
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