IRG7PH30K10DPBF_15 Datasheet, PDF (5/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

2000
1600
1200
800
400
EON
EOFF
IRG7PH30K10DPbF
1000
tF
tdOFF
100
tR
10
tdON
0
5
10
15
20
IC (A)
Fig. 13 - Typ. Energy Loss vs. I_C
T_J = 150°C; L = 1.0mH; V_CE = 600V, R_G = 22Ω; V_GE = 15V
1600
1400
1200
EON
1000
1
0
5
10
15
20
IC (A)
Fig. 14 - Typ. Switching Time vs. I_C
T_J = 150°C; L = 1.0mH; V_CE = 600V, R_G = 22Ω; V_GE = 15V
1000
tF
100
tdOFF
tR
800
600
EOFF
10
tdON
400
0
20
40
60
80 100
RG (Ω)
Fig. 15 - Typ. Energy Loss vs. R_G
T_J = 150°C; L = 1.0mH; V_CE = 600V, I_CE = 9.0A; V_GE = 15V
18
RG ₌ 5.0Ω
16
1
0
20
40
60
80 100
RG (Ω)
Fig. 16 - Typ. Switching Time vs. R_G
T_J = 150°C; L = 1.0mH; V_CE = 600V, I_CE = 9.0A; V_GE = 15V
18
16
14
RG ₌ 10Ω
14
12
RG ₌ 20Ω
12
10
8
RG ₌ 47Ω
10
6
4 6 8 10 12 14 16 18 20
IF (A)
Fig. 17 - Typ. Diode I_RR vs. I_F
T_J = 150°C
8
0
10
20
30
40
50
RG (Ω)
Fig. 18 - Typ. Diode I_RR vs. R_G
T_J = 150°C
www.irf.com
5