IRFBA1405PPBF Datasheet, PDF (9/10 Pages) International Rectifier – HEXFET® Power MOSFET

IRFBA1405PPbF
Super-220™ ( TO-273AA ) Package Outline
A
1.50 [.059]
0.50 [.020]
11.00 [.433]
10.00 [.394]
5.00 [.196]
B
4.00 [.158]
9.00 [.
8.00 [.
0.25 [
15.00 [.590]
14.00 [.552]
4
13.50 [.
12.50 [.
123
4.00 [.157]
3.50 [.138]
14.50 [.570]
13.00 [.512]
2.55 [.100]
2X
3X
1.30 [.051]
0.90 [.036]
0.25 [.010] B A
4X
1.00
0.70
[.039]
[.028]
3.00 [.118]
2.50 [.099]
MOSFET
IGBT
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Starting T_J = 25°C, L = 0.11mH
R_G = 25Ω, I_AS = 101A. (See Figure 12).
ƒ I_SD ≤ 101A, di/dt ≤ 210A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 175°C
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… C_oss eff. is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS .Refer to AN-1001
† Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 95A.
‡ Limited by T_Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
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