IRFBA1405PPBF Datasheet, PDF (2/10 Pages) International Rectifier – HEXFET® Power MOSFET

IRFBA1405PPbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
V_(BR)DSS
∆V(BR)DSS/∆TJ
R_DS(on)
V_GS(th)
g_fs
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
L_D
Internal Drain Inductance
L_S
C_iss
C_oss
C_rss
C_oss
C_oss
C_oss eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance …
Min. Typ. Max. Units
Conditions
55 ––– ––– V V_GS = 0V, I_D = 250µA
––– 0.057 ––– V/°C Reference to 25°C, I_D = 1mA
––– 4.3 5.0 mΩ V_GS = 10V, I_D = 101A „
2.0 ––– 4.0
69 ––– –––
V V_DS = 10V, I_D = 250µA
S V_DS = 25V, I_D = 110A
––– ––– 20
––– ––– 250
µA ^{VDS = 55V, VGS = 0V}
V_DS = 44V, V_GS = 0V, T_J = 150°C
––– ––– 200 _nA V_GS = 20V
––– ––– -200
V_GS = -20V
––– 170 260
––– 44 66
––– 62 93
––– 13 –––
I_D = 101A
nC V_DS = 44V
V_GS = 10V„
V_DD = 38V
––– 190 ––– _ns I_D = 110A
––– 130 –––
R_G = 1.1Ω
––– 110 –––
V_GS = 10V „
Between lead,
D
––– 4.5 –––
6mm (0.25in.)
nH
from package
G
––– 7.5 –––
and center of die contact
S
––– 5480 –––
V_GS = 0V
––– 1210 ––– pF V_DS = 25V
––– 280 –––
ƒ = 1.0MHz, See Fig. 5
––– 5210 –––
––– 900 –––
V_GS = 0V, V_DS = 1.0V, ƒ = 1.0MHz
V_GS = 0V, V_DS = 44V, ƒ = 1.0MHz
––– 1500 –––
V_GS = 0V, V_DS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 174†
A
showing the
integral reverse
G
––– ––– 680
p-n junction diode.
S
––– ––– 1.3 V T_J = 25°C, I_S = 101A, V_GS = 0V „
––– 88 130 ns T_J = 25°C, I_F = 101A
––– 250 380 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Thermal Resistance
R_θJC
R_θCS
R_θJA
2
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
Units
0.45
°C/W
–––
58
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