AUIRF2805 Datasheet, PDF(9/12 Page) International Rectifier – ADVANCED PLANAR TECHNOLOGY, LOW ON-RESISTANCE

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AUIRF2805 Datasheet, PDF (9/12 Pages) International Rectifier – ADVANCED PLANAR TECHNOLOGY, LOW ON-RESISTANCE

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AUIRF2805

D.U.T

Driver Gate Drive

P.W.

Period

P.W.

Period

Circuit Layout Considerations

ï ï ï ï·ï Low Stray Inductance

ï ï·ï ï Ground Plane

ï ï·ï ï Low Leakage Inductance

Current Transformer

-Â +

D.U.T. ISD Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. VDS Waveform

Diode Recovery

dv/dt

ï·ï ï dv/dt controlled by RG

ï·ï ï Driver same type as D.U.T.

ï·ï ï ISD controlled by Duty Factor "D"

ï·ï ï D.U.T. - Device Under Test

VDD

Re-Applied

+ Voltage

Body Diode

Inductor Curent

Forward Drop

Ripple ï£ 5%

* VGS = 5V for Logic Level Devices

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFETÂ® Power MOSFETs

* VGS=10V

VDD

ISD

VDS

VGS

D.U.T.

10V

Pulse Width ï£ï ï±ï Âµs

Duty Factor ï£ï ï°ï®ï±ï ï¥

+-V DD

Fig 18a. Switching Time Test Circuit

VDS

90%

10%

VGS

td(on) tr

td(off) tf

Fig 18b. Switching Time Waveforms

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