AUIRF2805 Datasheet, PDF (1/12 Pages) International Rectifier – ADVANCED PLANAR TECHNOLOGY, LOW ON-RESISTANCE

AUTOMOTIVE GRADE
PD - 97690A
Features
l Advanced Planar Technology
l Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed
up to Tjmax
G
l Lead-Free, RoHS Compliant
l Automotive Qualified*
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
AUIRF2805
HEXFET^® Power MOSFET
D _V(BR)DSS
R_DS(on) typ.
max
I_{D (Silicon Limited)}
S _{ID (Package Limited)}
55V
3.9m
4.7m
175A
75A
D
G
Gate
DS
G
TO-220AB
AUIRF2805
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
I_DM
c Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
V_GS
E_AS
E_AS (tested)
I_AR
E_AR
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
i Single Pulse Avalanche Energy Tested Value
c Avalanche Current
h Repetitive Avalanche Energy
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_JC
j Junction-to-Case
R_CS
Case-to-Sink, Flat, Greased Surface
R_JA
Junction-to-Ambient
Max.
175
120
75
700
330
2.2
± 20
450
1220
See Fig. 12a, 12b, 15, 16
-55 to + 175
y y ³⁰⁰
10 lbf in (1.1N m)
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
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