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IRFB42N20DPBF Datasheet, PDF (8/8 Pages) International Rectifier – HEXFET Power MOSFET
IRFB42N20DPbF
TO-220AB Package Outline
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
10.54 (.415)
10.29 (.405)
4
3.78 (.149)
3.54 (.139)
-A-
6.47 (.255)
6.10 (.240)
1 23
1.15 (.045)
MIN
4.06 (.160)
3.55 (.140)
4.69 (.185)
4.20 (.165)
-B-
1.32 (.052)
1.22 (.048)
LEAD ASSIGNMENTS
HELXEFAED1T-AGSASTIGENMEINGTBSTs, CoPACK
1- GAT2E- DRAIN 1- GATE
2- DRA3IN- SOURCE 2- COLLECTOR
3- SOU4R-CDERAIN 3- EMITTER
4- DRAIN
4- COLLECTOR
3X
1.40 (.055)
1.15 (.045)
2.54 (.100)
3X
0.93 (.037)
0.69 (.027)
0.36 (.014) M B A M
3X
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAMP L E :
T H IS IS AN IR F 1010
L OT CODE 1789
AS S E MB L E D ON WW 19, 1997
IN T H E AS S E MB L Y L INE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
INT E RNAT IONAL
R E CT IF IE R
L OGO
AS S E MB L Y
L OT CODE
PART NU MB E R
DAT E CODE
YE AR 7 = 1997
WEE K 19
L INE C
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 1.45mH
RG = 25Ω, IAS = 26A, VGS=10V
ƒ ISD ≤ 26A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.7/04
8
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