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| IRFB42N20DPBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRFB42N20DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
200 âââ âââ V
âââ 0.26 âââ V/°C
âââ âââ 0.055 â¦
3.0 âââ 5.5 V
âââ âââ 25 µA
âââ âââ 250
âââ âââ 100
nA
âââ âââ -100
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 26A Â
VDS = VGS, ID = 250µA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 150°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
gfs
Forward Transconductance
21 âââ âââ
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
âââ 91 140
âââ 24 36
Qgd
td(on)
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
âââ 43 65
âââ 18 âââ
tr
td(off)
Rise Time
Turn-Off Delay Time
âââ 69 âââ
âââ 29 âââ
tf
Fall Time
Ciss
Input Capacitance
âââ 32 âââ
âââ 3430 âââ
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
âââ 530 âââ
âââ 100 âââ
Coss
Output Capacitance
Coss
Output Capacitance
âââ 5310 âââ
âââ 210 âââ
Coss eff. Effective Output Capacitance
âââ 400 âââ
Units
S
nC
ns
pF
Conditions
VDS = 50V, ID = 26A
ID = 26A
VDS = 160V
VGS = 10V,
VDD = 100V
ID = 26A
RG = 1.8â¦
VGS = 10V Â
VGS = 0V
VDS = 25V
Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 160V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 160V Â
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Typ.
âââ
âââ
âââ
Max.
510
26
33
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 44
A showing the
âââ âââ 180
integral reverse
G
p-n junction diode.
S
âââ âââ 1.3 V TJ = 25°C, IS = 26A, VGS = 0V Â
âââ 220 330 ns TJ = 25°C, IF = 26A
âââ 1860 2790 nC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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