IRF820APBF Datasheet, PDF (8/8 Pages) International Rectifier – HEXFET Power MOSFET

IRF820APbF
TO-220AB Package Outline
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
10.54 (.415)
10.29 (.405)
4
3.78 (.149)
3.54 (.139)
-A -
6.47 (.255)
6.10 (.240)
1 23
1.15 (.045)
MIN
4.06 (.160)
3.55 (.140)
4.69 (.185)
4.20 (.165)
-B -
1.32 (.052)
1.22 (.048)
LEAD ASSIGNMENTS
HE^LX^EF^AE_1DT_{-AGSASTIGENME}I^NG^TB^STs, CoPACK
1- GAT²E^{- DRAIN} 1- GATE
2- DRA3IN- SOURCE 2- COLLECTOR
3- SOU4R-CDERAIN 3- EMITTER
4- DRAIN
4- COLLECTOR
3X
1.40 (.055)
1.15 (.045)
2.54 (.100)
3X
0.93 (.037)
0.69 (.027)
0.36 (.014) M B A M
3X
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAMP LE :
T HIS IS AN IR F 1010
LOT CODE 1789
AS S E MB LE D ON WW 19, 1997
IN T HE AS S E MB LY LINE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
INT E R NAT IONAL
R E CT IF IE R
L OGO
AS S E MB LY
L OT CODE
PAR T NU MB E R
DAT E CODE
YE AR 7 = 1997
WE E K 19
LINE C
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting T_J = 25°C, L = 45mH
R_G = 25Ω, I_AS = 2.5A. (See Figure 12)
ƒ I_SD ≤ 2.5A, di/dt ≤ 270A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… C_oss eff. is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS
Data and specifications subject to change without notice.
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