IRF820APBF Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET Power MOSFET

IRF820APbF
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
10
Crss
1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{ID = 2.5A}
15
V_DS = 400V
V_DS = 250V
V_DS = 100V
10
5
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
4
8
12
16
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
T_J = 150° C
1
T_J = 25° C
0.1
0.4
V_GS = 0 V
0.6
0.8
1.0
1.2
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10
10us
100us
1
1ms
T_C = 25°C
T_J = 150°C
Single Pulse
0.1
10
100
10ms
1000
V_DS , Drain-to-Source Voltage (V)
10000
Fig 8. Maximum Safe Operating Area
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