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IRF7946PBF Datasheet, PDF (8/12 Pages) International Rectifier – DirectFETPower MOSFET | |||
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IRF7946PbF
+
Â
-
Â
RG
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
Â
Circuit Layout Considerations
ï ï ï ï·ï Low Stray Inductance
ï ï·ï ï Ground Plane
-
ï ï·ï ï Low Leakage Inductance
Current Transformer
-Â +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
ï·ï ï dv/dt controlled by RG
ï·ï ï Driver same type as D.U.T.
VDD
+
ï·ï ï ISD controlled by Duty Factor "D"
-
ï·ï ï D.U.T. - Device Under Test
Re-Applied
Voltage
Body Diode
InIndduuccttoorr CCuurrerennt t
Forward Drop
Ripple ï£ 5%
* VGS = 5V for Logic Level Devices
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
* VGS=10V
VDD
ISD
V(BR)DSS
15V
tp
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01ï
+
- VDD
A
Fig 22a. Unclamped Inductive Test Circuit
RD
VDS
VGS
RG
D.U.T.
+
-
VDD
V1G0SV
Pulse Width ï£ï ï±ï µs
Duty Factor ï£ï ï°ï®ï±ï ï¥
Fig 23a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
50Kï
12V
.2ïF
.3ïF
D.U.T.
+
-VDS
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 24a. Gate Charge Test Circuit
8
IAS
Fig 22b. Unclamped Inductive Waveforms
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 24b. Gate Charge Waveform
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