IRF7379PBF_15 Datasheet, PDF (8/10 Pages) International Rectifier – Generation V Technology

IRF7379PbF
P-Channel
1000
800
V _GS = 0V,
f = 1MHz
C_iss = C_gs + C _gd , C_ds SHORTED
C_rss = C _gd
C_oss = C_ds + C _gd
20 _{ID = -3.0A}
V_DS = -24V
16
600
Ciss
12
Coss
400
8
200
Crss
0
A
1
10
100
-_{-VDS , Drain-to-Source Voltage (V)}
Fig 18. Typical Capacitance Vs.
Drain-to-Source Voltage
4
FOR TEST CIRCUIT
SEE FIGURE 22
0
A
0
5
10
15
20
25
Q_G , Total Gate Charge (nC)
Fig 19. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
D = 0.50
10
0.20
0.10
0.05
0.02
1
0.01
PDM
t₁
t₂
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
1
10
100
t₁ , Rectangular Pulse Duration (sec)
Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
8
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