IRF7379PBF_15 Datasheet, PDF (2/10 Pages) International Rectifier – Generation V Technology

IRF7379PbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
V_(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
∆V_(BR)DSS/∆T_J Breakdown Voltage Temp. Coefficient
R_DS(ON)
Static Drain-to-Source On-Resistance
V_GS(th)
g_fs
Gate Threshold Voltage
Forward Transconductance
I_DSS
IGSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
LD
L_S
C_iss
C_oss
C_rss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductace
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min. Typ. Max. Units
30 — —
-30 — —
V
— 0.032 —
— -0.037 —
V/°C
— 0.038 0.045
—
—
0.055 0.075
0.070 0.090
Ω
— 0.130 0.180
1.0 — —
-1.0 — —
V
5.2 — —
2.5 — —
S
— — 1.0
—
—
—
—
-1.0
25
µA
— — -25
–– — ±100
— — 25
— — 25
—
—
—
—
2.9
2.9
nC
— — 7.9
— — 9.0
— 6.8 —
— 11 —
— 21 —
—
—
17
22
—
—
ns
— 25 —
— 7.7 —
— 18 —
—
—
4.0
6.0
—
—
nH
— 520 —
— 440 —
— 180 —
— 200 —
pF
— 72 —
— 93 —
Conditions
V_GS = 0V, I_D = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, I_D = -1mA
VGS = 10V, ID = 5.8A ƒ
V_GS = 4.5V, I_D = 4.9A ƒ
VGS = -10V, ID =- 4.3A ƒ
VGS = -4.5V, ID =- 3.7A ƒ
V_DS = V_GS, I_D = 250µA
VDS = VGS, ID = -250µA
V_DS = 15V, I_D = 2.4A ƒ
VDS = -24V, ID = -1.8A
ƒ
V_DS = 24 V, V_GS = 0V
VDS = -24V, VGS = 0V
VDS = 24 V, VGS = 0V, TJ = 125°C
V_DS = -24V, V_GS = 0V, T_J = 125°C
VGS = ± 20V
N-Channel
I_D = 2.4A, V_DS = 24V, V_GS = 10V
ƒ
P-Channel
I_D = -1.8A, V_DS = -24V, V_GS = -10V
N-Channel
V_DD = 15V, I_D = 2.4A, R_G = 6.0Ω,
R_D = 6.2Ω
ƒ
P-Channel
V_DD = -15V, I_D = -1.8A, R_G = 6.0Ω,
R_D = 8.2Ω
Between lead, 6mm (0.25in.) from
package and center of die contact
N-Channel
V_GS = 0V, V_DS = 25V, ƒ = 1.0MHz
ƒ
P-Channel
V_GS = 0V, V_DS = -25V, ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current (Body Diode)
I_SM
Pulsed Source Current (Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 )
Min. Typ. Max. Units
Conditions
N-Ch — — 3.1
P-Ch — — -3.1 _A
N-Ch — — 46
P-Ch — — -34
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
— 1.0 _V
— -1.0
47 71 _ns
53 80
56 84 _nC
66 99
T_J = 25°C, I_S = 1.8A, V_GS = 0V ƒ
TJ = 25°C, IS = -1.8A, VGS = 0V ƒ
N-Channel
T_J = 25°C, I_F = 2.4A, di/dt = 100A/µs
P-Channel
ƒ
T_J = 25°C, I_F = -1.8A, di/dt = -100A/µs
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
‚ N-Channel I_SD ≤ 2.4A, di/dt ≤ 73A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 150°C
P-Channel I_SD ≤ -1.8A, di/dt ≤ 90A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 150°C
2
„ Surface mounted on FR-4 board, t ≤ 10sec.
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