AUIRF7319Q Datasheet, PDF (8/13 Pages) International Rectifier – HEXFET® Power MOSFET

AUIRF7319Q
P-Channel
2.0 _{ID =-4.9A}
1.5
1.0
0.5
V_GS =-10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature ( ^°C)
Fig 16. Normalized On-Resistance
Vs. Temperature
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
V_GS = -4.5V
V_GS = -10V
A
10
20
30
-I_D , Drain Current (A)
Fig 17. Typical On-Resistance Vs. Drain
Current
0.16
0.12
0.08
I D = -4.9A
0.04
0.00
0
A
3
6
9
12
15
-V_GS , Gate -to-Source Voltage (V)
Fig 18. Typical On-Resistance Vs. Gate
Voltage
300
ID
TOP
-1.3A
250
-2.2A
BOTTOM -2.8A
200
150
100
50
0
25
50
75
100
125
150
Starting T_J , Junction Temperature ( ^°C)
Fig 19. Maximum Avalanche Energy
Vs. Drain Current
8
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