AUIRF7319Q Datasheet, PDF (1/13 Pages) International Rectifier – HEXFET® Power MOSFET

AUTOMOTIVE MOSFET
PD - 96364B
AUIRF7319Q
HEXFET^® Power MOSFET
Features
l Advanced Planar Technology
l Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Fully Avalanche Rated
l Automotive [Q101] Qualified*
l Lead-Free, RoHS Compliant
Description
Specifically designed for Automotive applications, these
HEXFET^® Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a 150°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other
applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it ideal
in a variety of power applications. This dual, surface mount
SO-8 can dramatically reduce board space and is also available
in Tape & Reel.
N-CHANNEL MOSFET
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
P-CHANNEL MOSFET
Top View
N-Ch P-Ch
V_(BR)DSS
30V -30V
R_DS(on) typ. 0.023_Ω 0.042_Ω
max. 0.029Ω 0.058Ω
I_D
6.5A -4.9A
G
Gate
SO-8
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
I_S
P_D @T_A = 25°C
P_D @T_A = 70°C
E_AS
I_AR
E_AR
V_GS
dv/dt
T_J
T_STG
Drain-Source Voltage
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Continuous Source Current( diode Conduction)
g Power Dissipation
g Power Dissipation
e Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Gate-to-Source Voltage
d Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Thermal Resistance
Max.
N-Channel
30
6.5
5.2
30
2.5
2.0
1.3
82
4.0
0.20
± 20
5.0
P-Channel
-30
-4.9
-3.9
-30
-2.5
140
-2.8
-5.0
-55 to + 150
Units
V
A
W
mJ
A
mJ
V
V/ns
°C
Parameter
R_θJA
g Junction-to-Ambient
Typ.
–––
Max.
62.5
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/24/11