IRHN9250 Datasheet, PDF (7/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)

Pre-Irradiation
IRHN9250, JANSR2N7423U
V_DS
L
R_G
-V2 0_GV_S
tp
D.U .T
IA _S
0.01Ω
D R IV E R
VD _D
A
1200
1000
800
 ^TOP
ID
-6.3A
-8.9A
BOTTOM -14A
600
15V
400
Fig 12a. Unclamped Inductive Test Circuit
200
I_AS
0
25
50
75
100
125
150
Starting T_J, Junction Temperature ( ^°C)
tp
V_(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
-12V
Q_GS
V_G
Q_G
Q_GD
Charge
Fig 13a. Basic Gate Charge Waveform
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Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
-1122VV
.2µF
50KΩ
.3µF
D.U.T.
-
+VDS
V_GS
-3mA
I_G
I_D
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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