IRHN9250 Datasheet, PDF (1/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)

PD - 91300D
RADIATION HARDENED
IRHN9250
JANSR2N7423U
POWER MOSFET
200V, P-CHANNEL
SURFACE MOUNT (SMD-1)
REF: MIL-PRF-19500/662
RAD Hard^™ HEXFET^® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHN9250 100K Rads (Si)
IRHN93250 300K Rads (Si)
RDS(on)
0.315Ω
0.315Ω
ID
-14A
-14A
QPL Part Number
JANSR2N7423U
JANSF2N7423U
International Rectifier’s RADHard HEXFET^TM technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Absolute Maximum Ratings
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
PCKG Mounting Surface Temp.
Weight
SMD-1
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n SimpleDriveRequirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n CeramicPackage
n Light Weight
-14
-9.0
-56
150
1.2
±20
500
-14
15
-41
-55 to 150
300 ( for 5s)
2.6 (typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o_C
g
For footnotes refer to the last page
www.irf.com
1
06/06/03