IRGPS40B120UD Datasheet, PDF (7/12 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

60
50
RG ₌ 4.7Ω
40
30
RG ₌₂₂ Ω
20
RG ₌₄₇ Ω
10
RG ₌₁₀₀ Ω
0
0
20
40
60
80
100
IF (A)
Fig. 17 - Typical Diode I_RR vs. I_F
T_J = 125°C
IRGPS40B120UD
60
50
40
30
20
10
0
0
50
100
150
RG (Ω)
Fig. 18 - Typical Diode I_RR vs. R_G
T_J = 125°C; I_F = 40A
60
50
40
30
20
10
0
0
500
1000
1500
diF /dt (A/µs)
Fig. 19- Typical Diode I_RR vs. di_F/dt
V_CC= 600V; V_GE= 15V;
I_CE= 40A; T_J = 125°C
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9
8
7
22Ω
47 Ω
6
4.7Ω _80A
40A
5
4
20A
3 _100Ω
2
1
0
0
500
1000
1500
diF /dt (A/µs)
Fig. 20 - Typical Diode Q_RR
V_CC= 600V; V_GE= 15V;T_J = 125°C
7