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IRGPS40B120UD Datasheet, PDF (1/12 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |||
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PD- 94240A
IRGPS40B120UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
UltraFast Co-Pack IGBT
Features
⢠Non Punch Through IGBT Technology.
⢠Low Diode VF.
⢠10µs Short Circuit Capability.
⢠Square RBSOA.
⢠Ultrasoft Diode Reverse Recovery Characteristics.
⢠Positive VCE (on) Temperature Coefficient.
⢠Super-247 Package.
Benefits
⢠Benchmark Efficiency for Motor Control.
C
G
E
N-channel
VCES = 1200V
VCE(on) typ. = 3.12V
@ VGE = 15V,
ICE = 40A, Tj=25°C
⢠Rugged Transient Performance.
⢠Low EMI.
⢠Significantly Less Snubber Required
⢠Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load CurrentÂ
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Le
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Internal Emitter Inductance (5mm from package)
www.irf.com
Super-247â¢
Max.
1200
80
40
160
160
80
40
160
± 20
595
238
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Min.
âââ
âââ
âââ
âââ
20 (2)
âââ
âââ
Typ.
âââ
âââ
0.24
âââ
âââ
6.0 (0.21)
13
Max.
0.20
0.83
âââ
40
âââ
âââ
âââ
Units
°C/W
N(kgf)
g (oz)
nH
1
8/18/04
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