IRG7PH44K10DPBF Datasheet, PDF (7/12 Pages) International Rectifier – Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

IRG7PH44K10DPbF/IRG7PH44K10D-EPbF
10000
16
1000
Cies
14
VCES= 600V
12
VCES= 400V
10
8
6
100
Coes
4
Cres
2
10
0
100 200 300 400 500 600
VCE (V)
Fig. 24 - Typ. Capacitance vs. V_CE
V_GE= 0V; f = 1MHz
1
0
0 20 40 60 80 100 120 140
Q _G, Total Gate Charge (nC)
Fig. 25 - Typical Gate Charge vs. V_GE
I_CE = 25A
D = 0.50
0.1
0.01
0.001
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
_{J J}
_{1 1}
R _{1R 1}
Ci= iRi
Ci= iRi
R _{2R 2}
_{2 2}
0.0001
1E-006
1E-005
0.0001
0.001
Ri (°C/W)
i (sec)
R _{3R 3}
R _{4R 4}
0.010602 0.000026
_{3 3}
_{4 4}
_CC
0.112078
0.000155
0.169631 0.003607
0.098447 0.018763
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 26 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.001
1E-006
Ri (°C/W)
i (sec)
R _{1R 1}
R_2R2
R _{3R 3}
R_4R4
0.016084
_{J J}
_{1 1}
_{CC 0.462040}
_{2 2}
_{3 3}
_{4 4}
0.554156
Ci= iRi
Ci= iRi
0.266112
0.000015
0.000462
0.003501
0.021934
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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November 4, 2013