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IRG7PH44K10DPBF Datasheet, PDF (1/12 Pages) International Rectifier – Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 1200V
IC = 40A, TC =100°C
tSC 10µs, TJ(max) = 150°C
VCE(ON) typ. = 1.9V @ IC = 25A
Applications
• Industrial Motor Drive
• UPS
Features
Low VCE(ON) and switching losses
10µs Short Circuit SOA
Square RBSOA
Maximum Junction Temperature 150°C
Positive VCE (ON) Temperature Coefficient
IRG7PH44K10DPbF
IRG7PH44K10D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
G
G
G
E
n-channel
G
Gate
E
C
G
IRG7PH44K10DPbF
TO‐247AC
C
Collector
E
C
G
IRG7PH44K10D‐EPbF
TO‐247AD
E
Emitter
Benefits
High efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability
Excellent Current Sharing in Parallel Operation
Base part number
IRG7PH44K10DPBF
IRG7PH44K10D-EPBF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Tube
Quantity
25
Tube
25
Orderable Part Number
IRG7PH44K10DPBF
IRG7PH44K10D-EPBF
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE=20V
Clamped Inductive Load Current, VGE=20V 
Diode Continuous Forward Current
Diode Continuous Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
1200
70
40
100
100
20
10
±30
320
120
-40 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
C
Thermal Resistance
Parameter
RJC (IGBT)
RJC (Diode)
RCS
RJA
Thermal Resistance Junction-to-Case-(each IGBT) 
Thermal Resistance Junction-to-Case-(each Diode) 
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.40
1.3
–––
–––
Units
°C/W
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November 4, 2013