IRG7PH42UDPBF Datasheet, PDF (7/11 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRG7PH42UDPbF/IRG7PH42UD-EP
10000
16
1000
Cies
14
VCES = 600V
12
VCES = 400V
10
8
6
100
Coes
4
Cres
10
0
100 200 300 400 500 600
VCE (V)
Fig. 22 - Typ. Capacitance vs. V_CE
V_GE= 0V; f = 1MHz
1
2
0
0 20 40 60 80 100 120 140 160 180
Q _G, Total Gate Charge (nC)
Fig. 23 - Typical Gate Charge vs. V_GE
I_CE = 30A; L = 600µH
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
τ_{J τJ}
τ_{1 τ1}
R_1R1
R_2R2
τ_{2 τ2}
R_3R3
τ_{3 τ3}
R_4R4
τ_Cτ
Ri (°C/W)
0.1306
0.1752
τi (sec)
0.000313
0.002056
τ_{4 τ4}
0.0814 0.008349
Ci= τi/Ri
Ci i/Ri
0.0031 0.043100
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
τ_{J τJ}
τ_{1 τ1}
R_1R1
R_2R2
τ_{2 τ2}
R_3R3
τ_{3 τ3}
R_4R4
τ_Cτ
Ri (°C/W)
0.1254
0.0937
τi (sec)
0.000515
0.000515
τ_{4 τ4}
0.1889 0.001225
Ci= τi/Ri
Ci i/Ri
0.1511 0.018229
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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