IRG7PH42UDPBF Datasheet, PDF (5/11 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRG7PH42UDPbF/IRG7PH42UD-EP
12
120
10
100
8
ICE = 15A
6
ICE = 30A
ICE = 60A
4
2
0
4
8
12
16
20
VGE (V)
Fig. 11 - Typical V_CE vs. V_GE
T_J = 150°C
7000
6000
5000
4000
3000
EON
2000
1000
EOFF
0
0
10 20 30 40 50 60
IC (A)
Fig. 13 - Typ. Energy Loss vs. I_C
T_J = 150°C; L = 200µH; V_CE = 600V, R_G = 10Ω; V_GE = 15V
6000
80
60
TJ = 25°C
TJ = 150°C
40
20
0
4
6
8
10
12
VGE, Gate-to-Emitter Voltage (V)
Fig. 12 - Typ. Transfer Characteristics
V_CE = 50V
1000
tF
tdOFF
100
tR
tdON
10
0
10 20 30 40 50 60
IC (A)
Fig. 14 - Typ. Switching Time vs. I_C
T_J = 150°C; L = 200µH; V_CE = 600V, R_G = 10Ω; V_GE = 15V
10000
5000
4000
3000
EON
EOFF
2000
1000
0
20
40
60
80 100
RG (Ω)
Fig. 15 - Typ. Energy Loss vs. R_G
T_J = 150°C; L = 200µH; V_CE = 600V, I_CE = 30A; V_GE = 15V
1000
tdOFF
tF
100
tR
tdON
10
0
20
40
60
80 100
RG (Ω)
Fig. 16 - Typ. Switching Time vs. R_G
T_J = 150°C; L = 200µH; V_CE = 600V, I_CE = 30A; V_GE = 15V
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